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Table representation of search results timeline featuring number of search results per year.

Year Number of Results
1961 1
1964 1
1967 3
1968 2
1969 2
1970 1
1972 3
1973 1
1974 3
1976 2
1977 4
1979 3
1980 3
1981 1
1982 2
1984 2
1986 2
1987 7
1988 7
1989 4
1990 7
1991 7
1992 13
1993 17
1994 20
1995 14
1996 19
1997 10
1998 24
1999 15
2000 13
2001 32
2002 32
2003 24
2004 43
2005 71
2006 75
2007 78
2008 88
2009 106
2010 101
2011 141
2012 134
2013 163
2014 162
2015 218
2016 187
2017 226
2018 285
2019 285
2020 291
2021 317
2022 301
2023 304
2024 115

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3,748 results

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Page 1
Low-Temperature Annealing of CdZnTeSe under Bias.
Rejhon M, Dedic V, Grill R, Franc J, Roy UN, James RB. Rejhon M, et al. Sensors (Basel). 2021 Dec 28;22(1):171. doi: 10.3390/s22010171. Sensors (Basel). 2021. PMID: 35009714 Free PMC article.
We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. ...We observed that low-temperature annealing results in an increase in …
We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and in …
Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing.
Park W, Park JH, Eun JS, Lee J, Na JH, Lee SH, Jang J, Kang IM, Kim DK, Bae JH. Park W, et al. Nanomaterials (Basel). 2023 Aug 1;13(15):2231. doi: 10.3390/nano13152231. Nanomaterials (Basel). 2023. PMID: 37570549 Free PMC article.
A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InO(x)) semiconductors at a significantly low processing temperature of 200 C. Thermal annealing at a pressure of about ~10 Torr induces effective conde …
A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InO(x)) semiconductors at a signi …
Low-Temperature Thermally Evaporated SnO2 Based Electron Transporting Layer for Perovskite Solar Cells with Annealing Process.
Kim MR, Choi HW, Bark CW. Kim MR, et al. J Nanosci Nanotechnol. 2020 Sep 1;20(9):5491-5497. doi: 10.1166/jnn.2020.17620. J Nanosci Nanotechnol. 2020. PMID: 32331123
Perovskite solar cells (PSCs) have been comprehensively researched and led to an impressive improvement in a short period of time as cheaper alternatives to silicon solar cells due to their high energy-conversion efficiency and low production cost. Tin oxide (SnO2) has att …
Perovskite solar cells (PSCs) have been comprehensively researched and led to an impressive improvement in a short period of time as cheaper …
Realization of Ambient-Stable Room-Temperature Ferromagnetism by Low-Temperature Annealing of Graphene Oxide Nanoribbons.
Fu L, Wang Y, Zhang K, Zhang W, Chen J, Deng Y, Du Y, Tang N. Fu L, et al. ACS Nano. 2019 Jun 25;13(6):6341-6347. doi: 10.1021/acsnano.9b01542. Epub 2019 Apr 30. ACS Nano. 2019. PMID: 31026142
Graphene oxide nanoribbons (GONRs) annealed at the low temperature of 400 C (aGONRs-400) are developed as an excellent room-temperature (RT) ferromagnet. ...The preferential distribution of the magnetic phenolic hydroxyl toward the edges, which contrib …
Graphene oxide nanoribbons (GONRs) annealed at the low temperature of 400 C (aGONRs-400) are developed as an excellent …
Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD.
Chrostowski M, Alvarez J, Le Donne A, Binetti S, Roca I Cabarrocas P. Chrostowski M, et al. Materials (Basel). 2019 Nov 19;12(22):3795. doi: 10.3390/ma12223795. Materials (Basel). 2019. PMID: 31752297 Free PMC article.
We investigate low-temperature (<200 C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p-n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower th …
We investigate low-temperature (<200 C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p-n junction …
Effect of Low Annealing Temperature on the Critical-Current Density of 2% C-Doped MgB(2) Wires Used in Superconducting Coils with the Wind-and-React (W&R) Method-High-Field and High-Temperature Pinning Centers.
Czujko T, Gajda D, Rindfleisch M, Babij M, Zaleski A. Czujko T, et al. Materials (Basel). 2023 Sep 11;16(18):6157. doi: 10.3390/ma16186157. Materials (Basel). 2023. PMID: 37763435 Free PMC article.
The use of a low annealing temperature during the production of coils made from superconducting materials is very important because it reduces the production costs. ...During our research study, we determined the process window that provides the best critical …
The use of a low annealing temperature during the production of coils made from superconducting materials is very impor …
Activation of alpha-Fe(2) O(3) for Photoelectrochemical Water Splitting Strongly Enhanced by Low Temperature Annealing in Low Oxygen Containing Ambient.
Makimizu Y, Nguyen NT, Tucek J, Ahn HJ, Yoo J, Poornajar M, Hwang I, Kment S, Schmuki P. Makimizu Y, et al. Chemistry. 2020 Feb 26;26(12):2685-2692. doi: 10.1002/chem.201904430. Epub 2020 Feb 11. Chemistry. 2020. PMID: 31788871 Free PMC article.
In the present work, the PEC water splitting performance of nanostructured alpha-Fe(2) O(3) is investigated which was prepared by anodization followed by annealing in a low oxygen ambient (0.03 % O(2) in Ar). It was found that low oxygen annealing can …
In the present work, the PEC water splitting performance of nanostructured alpha-Fe(2) O(3) is investigated which was prepared by anodizatio …
Low-Temperature As-Grown Crystalline beta-Ga(2)O(3) Films via Plasma-Enhanced Atomic Layer Deposition.
Ilhom S, Mohammad A, Shukla D, Grasso J, Willis BG, Okyay AK, Biyikli N. Ilhom S, et al. ACS Appl Mater Interfaces. 2021 Feb 24;13(7):8538-8551. doi: 10.1021/acsami.0c21128. Epub 2021 Feb 10. ACS Appl Mater Interfaces. 2021. PMID: 33566585
We report on the low-temperature growth of crystalline Ga(2)O(3) films on Si, sapphire, and glass substrates using plasma-enhanced atomic layer deposition (PEALD) featuring a hollow-cathode plasma source. ...Our results demonstrate the effectiveness of in situ Ar pl …
We report on the low-temperature growth of crystalline Ga(2)O(3) films on Si, sapphire, and glass substrates using plasma-enha …
Investigation on Low-temperature Annealing Process of Solution-processed TiO(2) Electron Transport Layer for Flexible Perovskite Solar Cell.
Yu X, Zou X, Cheng J, Chen D, Yao Y, Chang C, Liu B, Wang J, Zhou Z, Li G. Yu X, et al. Materials (Basel). 2020 Feb 25;13(5):1031. doi: 10.3390/ma13051031. Materials (Basel). 2020. PMID: 32106412 Free PMC article.
Flexible perovskite solar cells (PSCs) have received increasing attention in wearable and portable devices over the past ten years. The low-temperature process of electron transport layer plays a key role in fabricating flexible PSCs. In this paper, we improve the p …
Flexible perovskite solar cells (PSCs) have received increasing attention in wearable and portable devices over the past ten years. The l …
Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments.
Włodarski M, Chodorow U, Jóźwiak S, Putkonen M, Durejko T, Sajavaara T, Norek M. Włodarski M, et al. Materials (Basel). 2019 Sep 30;12(19):3212. doi: 10.3390/ma12193212. Materials (Basel). 2019. PMID: 31575000 Free PMC article.
ZnS crystallized into small crystallites (1-7 nm) with cubic sphalerite structure, which remained stable under the applied annealing conditions. The size of the crystallites (D) tended to decrease with annealing temperature, in agreement with the EDS data (de …
ZnS crystallized into small crystallites (1-7 nm) with cubic sphalerite structure, which remained stable under the applied annealing …
3,748 results